vishay siliconix sie822df document number: 74451 s09-1338-rev. b, 13-jul-09 www.vishay.com 1 n-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? ultra low thermal resistance using top- exposed polarpak ? package for double- sided cooling ? leadframe-based new encapsulated package - die not exposed - same layout regardless of die size ? low q gd /q gs ratio helps prevent shoot-through ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ?vrm ? dc-dc conversion ? synchronous rectification product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) silicon limit package limit 20 0.0034 at v gs = 10 v 138 50 24 nc 0.0055 at v gs = 4.5 v 108 50 package drawing www.vishay.com/doc?73398 orderin g information: sie 8 22df-t1-e3 (lead (p b )-free) sie 8 22df-t1-ge3 (lead (p b )-free and halogen-free) to p v ie w bottom v ie w top s u rface is connected to pins 1, 5, 6, and 10 10 d s s g d d s s g d polarpak 1 432 5 67 8 9 d dsg d 5 4 3 2 1 6 7 8 9 10 for related documents www.vishay.com/ppg?74451 n -channel mosfet g d s notes: a. package limited is 50 a. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ) . the polarpak is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufactu ring. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate botto m side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 138 (silicon limit) a 50 a (package limit) t c = 70 c 50 a t a = 25 c 31 b, c t a = 70 c 24.8 b, c pulsed drain current i dm 80 continuous source-drain diode current t c = 25 c i s 50 a t a = 25 c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 30 avalanche energy e as 45 mj maximum power dissipation t c = 25 c p d 104 w t c = 70 c 66 t a = 25 c 5.2 b, c t a = 70 c 3.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260
www.vishay.com 2 document number: 74451 s09-1338-rev. b, 13-jul-09 vishay siliconix sie822df notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady stat e conditions is 68 c/w. c. measured at source pin ( on the side of the package). notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t 10 s r thja 20 24 c/w maximum junction-to-case (drain top) a steady state r thjc (drain) 1 1.2 maximum junction-to-case (source) a, c r thjc (source) 2.8 3.4 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 24.1 mv/c v gs(th) temperature coefficient v gs(th) /t j - 7.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.3 3.0 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 25 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 18.3 a 0.0028 0.0034 v gs = 4 .5 v, i d = 14.5 a 0.0045 0.0055 forward transconductance a g fs v ds = 15 v, i d = 18.3 a 90 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 4200 pf output capacitance c oss 1000 reverse transfer capacitance c rss 320 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 20 a 52 78 nc v ds = 10 v, v gs = 4.5 v, i d = 20 a 24 36 gate-source charge q gs 13 gate-drain charge q gd 5 gate resistance r g f = 1 mhz 1.0 1.5 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1 i d ? 10 a, v gen = 4.5 v, r g = 1 50 75 ns rise time t r 220 330 turn-off delay time t d(off) 35 55 fall time t f 20 30 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 1 i d ? 10 a, v gen = 10 v, r g = 1 15 25 rise time t r 25 40 turn-off delay time t d(off) 35 55 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 50 a pulse diode forward current a i sm 80 body diode voltage v sd i s = 10 a 0.8 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 40 60 ns body diode reverse recovery charge q rr 36 60 nc reverse recovery fall time t a 19 ns reverse recovery rise time t b 21
document number: 74451 s09-1338-rev. b, 13-jul-09 www.vishay.com 3 vishay siliconix sie822df typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 20 40 60 8 0 0.0 0.4 0. 8 1.2 1.6 2.0 v gs = 10 v thr u 4 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 3 v 0204060 8 0 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ds(on) - on-resistance (m ) 0.003 0.004 0.005 0.006 0.002 0.0025 0.0035 0.0045 0.0055 0 2 4 6 8 10 0 102030405060 i d = 20 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 16 v v ds = 10 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 1.5 2.0 2.5 3.0 3.5 4.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 1200 2400 3600 4 8 00 0 5 10 15 20 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v , 4.5 v t j - j u nction temperat u re (c) r ds(on) - on-resistance ( n ormalized) i d = 1 8 .3 a
www.vishay.com 4 document number: 74451 s09-1338-rev. b, 13-jul-09 vishay siliconix sie822df typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 10 100 t j = 25 c t j = 150 c 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 2.6 2. 8 3.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - temperat u re (c) v gs(th) ( v ) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 246 8 10 i d = 1 8 .3 a v gs - gate-to-so u rce v oltage ( v ) r ds(on) - drain-to-so u rce on-resistance ( ) t a = 25 c t a = 125 c 0.004 0.003 0.002 0.005 0.006 0.007 0.00 8 0 30 5 0 10 20 ) w ( r e w o p time (s) 40 10 1000 1 0.1 0.01 100 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 ms 10 ms 100 ms dc 1 s 10 s 0.1 1 10 10 t a = 25 c single p u lse limited b y r ds(on) * b v dss limited
document number: 74451 s09-1338-rev. b, 13-jul-09 www.vishay.com 5 vishay siliconix sie822df typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 8 0 100 120 140 160 0 25 50 75 100 125 150 i d - drain c u rrent (a) t c - case temperat u re (c) package limited power derating, junction-to-case 0 20 40 60 8 0 100 120 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 74451 s09-1338-rev. b, 13-jul-09 vishay siliconix sie822df typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74451 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 55 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-case (drain top) 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02 0.05 normalized thermal transient impedance, junction-to-source 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02
d s s g d d s s g d m3 m1 m2 m3 t2 t1 t3 t3 t4 t5 t5 m4 z d d1 a1 detail z e1 e c a view a view a k1 k4 k4 b4 b4 p1 p1 h1 h2 h3 h4 b1 b2 b3 h1 b1 m4 5 4 3 2 1 6 7 8 9 10 ds sgd 54 321 ssg dd 67 8910 (bottom view) (top view) b5 b5 b5 product datasheet/information page contain links to applicable package drawing. package information vishay siliconix document number: 73398 10-jun-05 www.vishay.com 1 polarpak (option s)
package information vishay siliconix www.vishay.com 2 document number: 73398 10-jun-05 millimeters inches dim min nom max min nom max a 0.75 0.80 0.85 0.030 0.031 0.033 a1 0.00 ? 0.05 0.000 ? 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 d 6.00 6.15 6.30 0.236 0.242 0.248 d1 5.74 5.89 6.04 0.226 0.232 0.238 e 5.01 5.16 5.31 0.197 0.203 0.209 e1 4.75 4.90 5.05 0.187 0.193 0.199 h1 0.23 ? ? 0.009 ? ? h2 0.45 ? 0.56 0.020 ? 0.022 h3 0.31 0.41 0.51 0.012 0.016 0.020 h4 0.45 ? 0.56 0.020 ? 0.022 k1 4.22 4.37 4.52 0.166 0.172 0.178 k4 0.24 ? ? 0.009 ? ? m1 4.30 4.50 4.70 0.169 0.177 0.185 m2 3.43 3.58 3.73 0.135 0.141 0.147 m3 0.22 ? ? 0.009 ? ? m4 0.05 ? ? 0.002 ? ? p1 0.15 0.20 0.25 0.006 0.008 0.010 t1 3.48 3.64 4.10 0.137 0.143 0.150 t2 0.56 0.76 0.95 0.22 0.030 0.037 t3 1.20 ? ? 0.051 ? ? t4 3.90 ? ? 0.154 ? ? t5 0 0.18 0.36 0.000 0.007 0.014 0 10 12 0 10 12 ecn: s ? 51049?rev. b, 13-jun-05 dwg: 5947 note: millimeters govern over inches
application note 826 vishay siliconix www.vishay.com document number: 73491 6 revision: 21-jan-08 application note recommended minimum pads for polarpak ? option l and s 0.955 (0.03 8 ) 0.410 (0.016) 0.510 (0.020) 0.510 (0.020) 7.300 (0.2 8 7) 0.955 (0.03 8 ) 0. 8 95 (0.035) 0. 8 95 (0.035) 0.5 8 0 (0.023) 2.290 (0.090) 0.510 (0.020) 0.5 8 0 (0.023) 4.520 (0.17 8 ) 6.310 (0.24 8 ) + recommended minim u m for polarpak option l and s dimensions in mm/(inches) n o external traces w ithin broken lines dot indicates gate pin (part marking) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
